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Heterojunction Devices Fabricated from Sprayed n-Type Ga2O3, Combined with Sputtered p-Type NiO and Cu2O.
Dimopoulos, Theodoros; Wibowo, Rachmat Adhi; Edinger, Stefan; Wolf, Maximilian; Fix, Thomas.
Afiliación
  • Dimopoulos T; Energy Conversion and Hydrogen Technologies, Center for Energy, AIT Austrian Institute of Technology, Giefinggasse 2, 1210 Vienna, Austria.
  • Wibowo RA; Energy Conversion and Hydrogen Technologies, Center for Energy, AIT Austrian Institute of Technology, Giefinggasse 2, 1210 Vienna, Austria.
  • Edinger S; Energy Conversion and Hydrogen Technologies, Center for Energy, AIT Austrian Institute of Technology, Giefinggasse 2, 1210 Vienna, Austria.
  • Wolf M; Energy Conversion and Hydrogen Technologies, Center for Energy, AIT Austrian Institute of Technology, Giefinggasse 2, 1210 Vienna, Austria.
  • Fix T; ICube Laboratory, Université de Strasbourg and Centre National de la Recherche Scientifique (CNRS), 23 Rue Du Loess, BP 20 CR, F-67037 Cedex 2 Strasbourg, France.
Nanomaterials (Basel) ; 14(3)2024 Feb 01.
Article en En | MEDLINE | ID: mdl-38334571
ABSTRACT
This work reports on the properties of heterojunctions consisting of n-type Ga2O3 layers, deposited using ultrasonic spray pyrolysis at high temperature from water-based solution, combined with p-type NiO and Cu2O counterparts, deposited by radio frequency and reactive, direct-current magnetron sputtering, respectively. After a comprehensive investigation of the properties of the single layers, the fabricated junctions on indium tin oxide (ITO)-coated glass showed high rectification, with an open circuit voltage of 940 mV for Ga2O3/Cu2O and 220 mV for Ga2O3/NiO under simulated solar illumination. This demonstrates in praxis the favorable band alignment between the sprayed Ga2O3 and Cu2O, with small conduction band offset, and the large offsets anticipated for both energy bands in the case of Ga2O3/NiO. Large differences in the ideality factors between the two types of heterojunctions were observed, suggestive of distinctive properties of the heterointerface. Further, it is shown that the interface between the high-temperature-deposited Ga2O3 and the ITO contact does not impede electron transport, opening new possibilities for the design of solar cell and optoelectronic device architectures.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2024 Tipo del documento: Article País de afiliación: Austria Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2024 Tipo del documento: Article País de afiliación: Austria Pais de publicación: Suiza