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Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials.
Wintersteller, Simon; Yarema, Olesya; Kumaar, Dhananjeya; Schenk, Florian M; Safonova, Olga V; Abdala, Paula M; Wood, Vanessa; Yarema, Maksym.
Afiliación
  • Wintersteller S; Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092, Zürich, Switzerland.
  • Yarema O; Materials and Device Engineering, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092, Zürich, Switzerland.
  • Kumaar D; Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092, Zürich, Switzerland.
  • Schenk FM; Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092, Zürich, Switzerland.
  • Safonova OV; Paul Scherrer Institute, 5232, Villigen, Switzerland.
  • Abdala PM; Laboratory of Energy Science and Engineering, Department of Mechanical and Process Engineering, ETH Zurich, 8092, Zürich, Switzerland.
  • Wood V; Materials and Device Engineering, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092, Zürich, Switzerland.
  • Yarema M; Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092, Zürich, Switzerland. yaremam@ethz.ch.
Nat Commun ; 15(1): 1011, 2024 Feb 03.
Article en En | MEDLINE | ID: mdl-38307863
ABSTRACT
The reversible phase transitions in phase-change memory devices can switch on the order of nanoseconds, suggesting a close structural resemblance between the amorphous and crystalline phases. Despite this, the link between crystalline and amorphous tellurides is not fully understood nor quantified. Here we use in-situ high-temperature x-ray absorption spectroscopy (XAS) and theoretical calculations to quantify the amorphous structure of bulk and nanoscale GeTe. Based on XAS experiments, we develop a theoretical model of the amorphous GeTe structure, consisting of a disordered fcc-type Te sublattice and randomly arranged chains of Ge atoms in a tetrahedral coordination. Strikingly, our intuitive and scalable model provides an accurate description of the structural dynamics in phase-change memory materials, observed experimentally. Specifically, we present a detailed crystallization mechanism through the formation of an intermediate, partially stable 'ideal glass' state and demonstrate differences between bulk and nanoscale GeTe leading to size-dependent crystallization temperature.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2024 Tipo del documento: Article País de afiliación: Suiza Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2024 Tipo del documento: Article País de afiliación: Suiza Pais de publicación: Reino Unido