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Formation techniques for upper active channel in monolithic 3D integration: an overview.
Nguyen, An Hoang-Thuy; Nguyen, Manh-Cuong; Nguyen, Anh-Duy; Jeon, Seung Joon; Park, Noh-Hwal; Lee, Jeong-Hwan; Choi, Rino.
Afiliación
  • Nguyen AH; 3D Convergence Center at Inha University, Incheon, 22212, South Korea.
  • Nguyen MC; 3D Convergence Center at Inha University, Incheon, 22212, South Korea.
  • Nguyen AD; Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea.
  • Jeon SJ; 3D Convergence Center at Inha University, Incheon, 22212, South Korea.
  • Park NH; 3D Convergence Center at Inha University, Incheon, 22212, South Korea.
  • Lee JH; 3D Convergence Center at Inha University, Incheon, 22212, South Korea. jeong-hwan.lee@inha.ac.kr.
  • Choi R; Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea. jeong-hwan.lee@inha.ac.kr.
Nano Converg ; 11(1): 5, 2024 Jan 29.
Article en En | MEDLINE | ID: mdl-38285077
ABSTRACT
The concept of three-dimensional stacking of device layers has attracted significant attention with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration provides a notable benefit in achieving a higher connection density between upper and lower device layers than through-via-silicon. Nevertheless, the practical implementation of M3D integration into commercial production faces several technological challenges. Developing an upper active channel layer for device fabrication is the primary challenge in M3D integration. The difficulty arises from the thermal budget limitation for the upper channel process because a high thermal budget process may degrade the device layers below. This paper provides an overview of the potential technologies for forming active channel layers in the upper device layers of M3D integration, particularly for complementary metal-oxide-semiconductor devices and digital circuits. Techniques are for polysilicon, single crystal silicon, and alternative channels, which can solve the temperature issue for the top layer process.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Converg Año: 2024 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Converg Año: 2024 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Reino Unido