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Stacking-induced phonon transport engineering of siligene.
Cao, Haibin; Luo, Yufeng; Jiao, Wenyan; Lei, Wen; Han, Shihao; Liu, Huijun.
Afiliación
  • Cao H; Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
  • Luo Y; Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
  • Jiao W; Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
  • Lei W; Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
  • Han S; Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
  • Liu H; Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
Nanotechnology ; 35(18)2024 Feb 12.
Article en En | MEDLINE | ID: mdl-38271731
ABSTRACT
Tunable phonon transport properties of two-dimensional materials are desirable for effective heat management in various application scenarios. Here, we demonstrate by first-principles calculations and Boltzmann transport theory that the lattice thermal conductivity of siligene could be efficiently engineered by forming various stacking configurations. Unlike few-layer graphene, the stacked siligenes are found to be covalently bonded along the out-of-plane direction, which leads to unique dependence of the thermal conductivity on both the stacking order and layer number. Due to the restricted flexural phonon scattering induced by the horizontal reflection symmetry, the AA stacking configuration of bilayer siligene exhibits obviously higher thermal conductivity compared with the AB stacking. In addition, we observe increasing thermal conductivity with the layer number, as evidenced by the reduced phonon scattering phase space and Grüneisen parameter. Interestingly, the Fuchs-Sondheimer model works well for the thickness-dependent thermal conductivity of stacked siligenes.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2024 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
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PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2024 Tipo del documento: Article Pais de publicación: Reino Unido