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The warming-up effects of quantum-dot light emitting diodes: A reversible stability issue related to shell traps.
Li, Menglin; Zhang, Xin; Bao, Hui; Yan, Yiran; Wu, Xian-Gang; Wang, Cheng; Cao, Yongqi; Yang, Min; Chen, Cuili; Hu, Xiangmin; Hou, Wenjun; Cao, Weiran; Zhong, Haizheng.
Afiliación
  • Li M; MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China.
  • Zhang X; MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China.
  • Bao H; MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China.
  • Yan Y; TCL Corporate Research, Shenzhen, Guangdong 518067, China.
  • Wu XG; MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China.
  • Wang C; TCL Corporate Research, Shenzhen, Guangdong 518067, China.
  • Cao Y; MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China.
  • Yang M; MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China.
  • Chen C; MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China.
  • Hu X; MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China.
  • Hou W; TCL Corporate Research, Shenzhen, Guangdong 518067, China.
  • Cao W; TCL Corporate Research, Shenzhen, Guangdong 518067, China.
  • Zhong H; MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China.
J Chem Phys ; 160(4)2024 Jan 28.
Article en En | MEDLINE | ID: mdl-38265088
ABSTRACT
The aging phenomenon is commonly observed in quantum-dot light emitting diodes (QLEDs), involving complex chemical or physical processes. Resolving the underlying mechanism of these aging issues is crucial to deliver reliable electroluminescent devices in future display applications. Here, we report a reversible positive aging phenomenon that the device brightness and efficiency significantly improve after device operation, but recover to initial states after long-time storage or mild heat treatment, which can be termed as warming-up effects. Steady and transient equivalent circuit analysis suggest that the radiative recombination current dramatically increases but electron leakage from the quantum dots (QDs) to hole transport layer becomes more accessible during the warming-up process. Further analysis discloses that the notable enhancement of device efficiency can be ascribed to the filling of shell traps in gradient alloyed QDs. This work reveals a distinct positive aging phenomenon featured with reversibility, and further guidelines would be provided to achieve stable QLED devices in real display applications.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Guideline Idioma: En Revista: J Chem Phys Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Guideline Idioma: En Revista: J Chem Phys Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos