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Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide.
Criswell, Scott G; Mahadik, Nadeemullah A; Gallagher, James C; Barnett, Julian; Kim, Luke; Ghorbani, Morvarid; Kamaliya, Bhaveshkumar; Bassim, Nabil D; Taubner, Thomas; Caldwell, Joshua D.
Afiliación
  • Criswell SG; Department of Electrical Engineering, Vanderbilt University, 2400 Highland Avenue, Nashville, Tennessee 37212, United States.
  • Mahadik NA; Electro-Optic Technology Division, Naval Surface Warfare Center, Crane, Indiana 47522, United States.
  • Gallagher JC; US Naval Research Laboratory, 4555 Overlook Avenue, S.W., Washington, D.C. 20375, United States.
  • Barnett J; US Naval Research Laboratory, 4555 Overlook Avenue, S.W., Washington, D.C. 20375, United States.
  • Kim L; I. Institute of Physics (IA), RWTH Aachen, 52074 Aachen, Germany.
  • Ghorbani M; Department of Mechanical Engineering, Vanderbilt University, 2400 Highland Avenue, Nashville, Tennessee 37212, United States.
  • Kamaliya B; Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L8, Canada.
  • Bassim ND; Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L8, Canada.
  • Taubner T; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4L8, Canada.
  • Caldwell JD; Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L8, Canada.
Nano Lett ; 24(1): 114-121, 2024 Jan 10.
Article en En | MEDLINE | ID: mdl-38164942
ABSTRACT
Extended defects in wide-bandgap semiconductors have been widely investigated using techniques providing either spectroscopic or microscopic information. Nano-Fourier transform infrared spectroscopy (nano-FTIR) is a nondestructive characterization method combining FTIR with nanoscale spatial resolution (∼20 nm) and topographic information. Here, we demonstrate the capability of nano-FTIR for the characterization of extended defects in semiconductors by investigating an in-grown stacking fault (IGSF) present in a 4H-SiC epitaxial layer. We observe a local spectral shift of the mid-infrared near-field response, consistent with the identification of the defect stacking order as 3C-SiC (cubic) from comparative simulations based on the finite dipole model (FDM). This 3C-SiC IGSF contrasts with the more typical 8H-SiC IGSFs reported previously and is exemplary in showing that nanoscale spectroscopy with nano-FTIR can provide new insights into the properties of extended defects, the understanding of which is crucial for mitigating deleterious effects of such defects in alternative semiconductor materials and devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos