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Growth of Wafer-Scale Single-Crystal 2D Semiconducting Transition Metal Dichalcogenide Monolayers.
Singh, Jitendra; Astarini, Nadiya Ayu; Tsai, Meng-Lin; Venkatesan, Manikandan; Kuo, Chi-Ching; Yang, Chan-Shan; Yen, Hung-Wei.
Afiliación
  • Singh J; Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei City, 106335, Taiwan.
  • Astarini NA; Department of Physics, Udit Narayan Post Graduate College Padrauna, Kushinagar, Uttar Pradesh, 274304, India.
  • Tsai ML; Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei City, 106335, Taiwan.
  • Venkatesan M; Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei City, 106335, Taiwan.
  • Kuo CC; Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei City, 106344, Taiwan.
  • Yang CS; Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei City, 106344, Taiwan.
  • Yen HW; Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei City, 11677, Taiwan.
Adv Sci (Weinh) ; 11(11): e2307839, 2024 Mar.
Article en En | MEDLINE | ID: mdl-38164110
ABSTRACT
Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2024 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Alemania
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2024 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Alemania