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Reversible Charge Transfer Doping in Atomically Thin In2O3 by Viologens.
Wang, Sung-Tsun; Lin, Yu-Liang; Lee, Lin-Ruei; Chang, Yu-Cheng; Tseng, Robert; Weng, Tzu-Ting; He, Yan-Yi; Pan, Yi-Yu; Chou, Tsung-Te; Chen, Jiun-Tai; Lien, Der-Hsien.
Afiliación
  • Wang ST; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
  • Lin YL; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
  • Lee LR; Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
  • Chang YC; Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
  • Tseng R; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
  • Weng TT; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
  • He YY; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
  • Pan YY; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
  • Chou TT; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
  • Chen JT; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
  • Lien DH; Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu 30010, Taiwan.
ACS Appl Mater Interfaces ; 16(4): 5302-5307, 2024 Jan 31.
Article en En | MEDLINE | ID: mdl-38156405
ABSTRACT
Atomically thin oxide semiconductors are emerging as potential materials for their potentiality in monolithic 3D integration and sensor applications. In this study, a charge transfer method employing viologen, an organic compound with exceptional reduction potential among n-type organics, is presented to modulate the carrier concentration in atomically thin In2O3 without the need of annealing. This study highlights the critical role of channel thickness on doping efficiency, revealing that viologen charge transfer doping is increasingly pronounced in thinner channels owing to their increased surface-to-volume ratio. Upon viologen doping, an electron sheet density of 6.8 × 1012 cm-2 is achieved in 2 nm In2O3 back gate device while preserving carrier mobility. Moreover, by the modification of the functional groups, viologens can be conveniently removed with acetone and an ultrasonic cleaner, making the viologen treatment a reversible process. Based on this doping scheme, we demonstrate an n-type metal oxide semiconductor inverter with viologen-doped In2O3, exhibiting a voltage gain of 26 at VD = 5 V. This complementary pairing of viologen and In2O3 offers ease of control over the carrier concentration, making it suitable for the next-generation electronic applications.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos