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3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach.
Maldonado, D; Cantudo, A; Gómez-Campos, F M; Yuan, Yue; Shen, Yaqing; Zheng, Wenwen; Lanza, M; Roldán, J B.
Afiliación
  • Maldonado D; Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain. jroldan@ugr.es.
  • Cantudo A; Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain. jroldan@ugr.es.
  • Gómez-Campos FM; Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain. jroldan@ugr.es.
  • Yuan Y; Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia. mario.lanza@kaust.edu.sa.
  • Shen Y; Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia. mario.lanza@kaust.edu.sa.
  • Zheng W; Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia. mario.lanza@kaust.edu.sa.
  • Lanza M; Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia. mario.lanza@kaust.edu.sa.
  • Roldán JB; Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain. jroldan@ugr.es.
Mater Horiz ; 11(4): 949-957, 2024 Feb 19.
Article en En | MEDLINE | ID: mdl-38105726
ABSTRACT
A 3D simulation of conductive nanofilaments (CNFs) in multilayer hexagonal-BN memristors is performed. To do so, a simulation tool based on circuit breakers is developed including for the first time a 3D resistive network. The circuit breakers employed can be modeled with two, three and four resistance states; in addition, a series resistance and a module to account for quantum effects, by means of the quantum point contact model, are also included. Finally, to describe real dielectric situations, regions with a high defect density are modeled with a great variety of geometrical shapes to consider their influence in the resistive switching (RS) process. The simulator has been tuned with measurements of h-BN memristive devices, fabricated with chemical-vapour-deposition grown h-BN layers, which were electrically and physically characterized. We show the formation of CNFs that produce filamentary charge conduction in our devices. Moreover, the simulation tool is employed to describe partial filament rupture in reset processes and show the low dependence of the set voltage on the device area, which is seen experimentally.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Mater Horiz Año: 2024 Tipo del documento: Article País de afiliación: España Pais de publicación: Reino Unido
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Mater Horiz Año: 2024 Tipo del documento: Article País de afiliación: España Pais de publicación: Reino Unido