Design and Characterization of 5 µm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing.
Sensors (Basel)
; 23(22)2023 Nov 16.
Article
en En
| MEDLINE
| ID: mdl-38005607
This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 µm photons with a pixel pitch as small as 3 µm. For a 5 µm pixel pitch photodiode, we measured the external quantum efficiency reaching as high as 54%. With substrate removal and an ideal anti-reflective coating, we estimated the internal quantum efficiency as achieving 77% at 1.55 µm. The best measured dark current density reached 5 nA/cm2 at -0.1 V and at 23 °C. The main contributors responsible for this dark current were investigated through the study of its evolution with temperature. We also highlight the importance of passivation with a perimetric contribution analysis and the correlation between MIS capacitance characterization and dark current performance.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Sensors (Basel)
Año:
2023
Tipo del documento:
Article
País de afiliación:
Francia
Pais de publicación:
Suiza