Exploring the ITO/PET Extended-Gate Field-Effect Transistor (EGFET) for pH Sensing.
Sensors (Basel)
; 23(20)2023 Oct 10.
Article
en En
| MEDLINE
| ID: mdl-37896443
In this project we investigated the extended-gate field-effect transistor (EGFET) structure used with ITO (Indium Tin Oxide)/PET (Polyethylene Terephthalate) sensitive films acting as the extended-gate part of an EGFET obtained from a combination of FETs from the CD4007 chip. We tested the device as a pH sensor by immersing the ITO/PET electrode in several chemical solutions of acidic and basic nature, including hydrogen peroxide, acetic acid, sulfuric acid, and ammonium hydroxide, at different concentrations. Using a Tektronix 4200A sourcemeter, we plotted the current-voltage (I-V) characteristics for the different chemical solutions, and we established a correlation to the pH changes. Results from the plotted I-V characteristics show a great dependance of the drain current (ID) on solution concentration. Furthermore, we measured the pH of each of the used solutions, and we established a relationship between the drain current and the pH value. Our results show a consistent decrease in the current with an increase in the pH value, although with different rates depending on the solution. The device showed high voltage sensitivity at 0.23 V per pH unit when tested in sulfuric acid.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Sensors (Basel)
Año:
2023
Tipo del documento:
Article
País de afiliación:
Estados Unidos
Pais de publicación:
Suiza