Direct characterization of intrinsic defects in monolayer ReSe<sub>2</sub> on graphene.

Lam, Nguyen Huu; Ko, Jae-Hyeok; Choi, Byoung Ki; Ly, Trinh Thi; Lee, Giyeok; Jang, Kyuha; Chang, Young Jun; Soon, Aloysius; Kim, Jungdae

Direct characterization of intrinsic defects in monolayer ReSe₂ on graphene.

Lam, Nguyen Huu; Ko, Jae-Hyeok; Choi, Byoung Ki; Ly, Trinh Thi; Lee, Giyeok; Jang, Kyuha; Chang, Young Jun; Soon, Aloysius; Kim, Jungdae.

Afiliación

Lam NH; Department of Physics, University of Ulsan Ulsan 44610 Republic of Korea kimjd@ulsan.ac.kr.
Ko JH; Department of Materials Science and Engineering and Center for Artificial Synesthesia Materials Discovery, Yonsei University Seoul 03722 Republic of Korea aloysius.soon@yonsei.ac.kr.
Choi BK; Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory Berkeley California 94720 USA.
Ly TT; Department of Physics, University of Seoul Seoul 02504 Republic of Korea yjchang@uos.ac.kr.
Lee G; Department of Physics, University of Ulsan Ulsan 44610 Republic of Korea kimjd@ulsan.ac.kr.
Jang K; Vietnam National University Ho Chi Minh City 700000 Vietnam.
Chang YJ; Faculty of Physics and Engineering Physics, University of Science Ho Chi Minh City 700000 Vietnam.
Soon A; Department of Materials Science and Engineering and Center for Artificial Synesthesia Materials Discovery, Yonsei University Seoul 03722 Republic of Korea aloysius.soon@yonsei.ac.kr.
Kim J; Radiation Center for Ultrafast Science, Korea Atomic Energy Research Institute Daejeon 34057 Republic of Korea.

Nanoscale Adv ; 5(20): 5513-5519, 2023 Oct 10.

Article en En | MEDLINE | ID: mdl-37822900

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanoscale Adv Año: 2023 Tipo del documento: Article Pais de publicación: Reino Unido

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