Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides.

Wang, Xinglu; Hu, Yaoqiao; Kim, Seong Yeoul; Addou, Rafik; Cho, Kyeongjae; Wallace, Robert M

Wang, Xinglu; Hu, Yaoqiao; Kim, Seong Yeoul; Addou, Rafik; Cho, Kyeongjae; Wallace, Robert M.

Afiliación

Wang X; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Hu Y; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Kim SY; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Addou R; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Cho K; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Wallace RM; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.

ACS Nano ; 17(20): 20353-20365, 2023 Oct 24.

Article en En | MEDLINE | ID: mdl-37788682

Palabras clave

Fermi level pinning; band alignment; density functional theory; imperfections; interface chemistry; metal contact; transition metal dichalcogenides

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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