Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing.

Wu, Guangjian; Zhang, Xumeng; Feng, Guangdi; Wang, Jingli; Zhou, Keji; Zeng, Jinhua; Dong, Danian; Zhu, Fangduo; Yang, Chenkai; Zhao, Xiaoming; Gong, Danni; Zhang, Mengru; Tian, Bobo; Duan, Chungang; Liu, Qi; Wang, Jianlu; Chu, Junhao; Liu, Ming

Wu, Guangjian; Zhang, Xumeng; Feng, Guangdi; Wang, Jingli; Zhou, Keji; Zeng, Jinhua; Dong, Danian; Zhu, Fangduo; Yang, Chenkai; Zhao, Xiaoming; Gong, Danni; Zhang, Mengru; Tian, Bobo; Duan, Chungang; Liu, Qi; Wang, Jianlu; Chu, Junhao; Liu, Ming.

Afiliación

Wu G; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
Zhang X; Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China.
Feng G; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
Wang J; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
Zhou K; Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China.
Zeng J; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
Dong D; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
Zhu F; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
Yang C; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
Zhao X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
Gong D; Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Zhang M; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
Tian B; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
Duan C; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
Liu Q; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
Wang J; State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
Chu J; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China. bbtian@ee.ecnu.edu.cn.
Liu M; Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.

Nat Mater ; 22(12): 1499-1506, 2023 Dec.

Article en En | MEDLINE | ID: mdl-37770677

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Mater Asunto de la revista: CIENCIA / QUIMICA Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido

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