Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T-4R structure for high-density memory.

Xie, Maosong; Jia, Yueyang; Nie, Chen; Liu, Zuheng; Tang, Alvin; Fan, Shiquan; Liang, Xiaoyao; Jiang, Li; He, Zhezhi; Yang, Rui

Xie, Maosong; Jia, Yueyang; Nie, Chen; Liu, Zuheng; Tang, Alvin; Fan, Shiquan; Liang, Xiaoyao; Jiang, Li; He, Zhezhi; Yang, Rui.

Afiliación

Xie M; University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China.
Jia Y; University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China.
Nie C; School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China.
Liu Z; University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China.
Tang A; Department of Electrical Engineering, Stanford University, Stanford, California, USA.
Fan S; School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi, China.
Liang X; School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China.
Jiang L; School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China.
He Z; MoE Key Lab of Artificial Intelligence, Shanghai Jiao Tong University, Shanghai, China.
Yang R; Shanghai Qi Zhi Institute, Shanghai, China.

Nat Commun ; 14(1): 5952, 2023 Sep 23.

Article en En | MEDLINE | ID: mdl-37741834

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido

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