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Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization in Co3Sn2S2.
Huang, Li; Kong, Xianghua; Zheng, Qi; Xing, Yuqing; Chen, Hui; Li, Yan; Hu, Zhixin; Zhu, Shiyu; Qiao, Jingsi; Zhang, Yu-Yang; Cheng, Haixia; Cheng, Zhihai; Qiu, Xianggang; Liu, Enke; Lei, Hechang; Lin, Xiao; Wang, Ziqiang; Yang, Haitao; Ji, Wei; Gao, Hong-Jun.
Afiliación
  • Huang L; Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
  • Kong X; School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
  • Zheng Q; College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
  • Xing Y; Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872, Beijing, China.
  • Chen H; Centre for the Physics of Materials and Department of Physics, McGill University, Montreal, QC, H3A 2T8, Canada.
  • Li Y; Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
  • Hu Z; School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
  • Zhu S; Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
  • Qiao J; School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
  • Zhang YY; Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
  • Cheng H; School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
  • Cheng Z; Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
  • Qiu X; School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
  • Liu E; Center for Joint Quantum Studies and Department of Physics, Institute of Science, Tianjin University, 300350, Tianjin, China.
  • Lei H; Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
  • Lin X; School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
  • Wang Z; Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872, Beijing, China.
  • Yang H; MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China.
  • Ji W; School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
  • Gao HJ; Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872, Beijing, China.
Nat Commun ; 14(1): 5230, 2023 Aug 26.
Article en En | MEDLINE | ID: mdl-37634043
Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co3Sn2S2, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido