Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory.

Haripriya, G R; Noh, Hee Yeon; Lee, Chan-Kang; Kim, June-Seo; Lee, Myoung-Jae; Lee, Hyeon-Jun

Haripriya, G R; Noh, Hee Yeon; Lee, Chan-Kang; Kim, June-Seo; Lee, Myoung-Jae; Lee, Hyeon-Jun.

Afiliación

Haripriya GR; Division of Nanotechnology, DGIST, 42988, South Korea. dear.hjlee@dgist.ac.kr.
Noh HY; Division of Nanotechnology, DGIST, 42988, South Korea. dear.hjlee@dgist.ac.kr.
Lee CK; Division of Nanotechnology, DGIST, 42988, South Korea. dear.hjlee@dgist.ac.kr.
Kim JS; Division of Nanotechnology, DGIST, 42988, South Korea. dear.hjlee@dgist.ac.kr.
Lee MJ; Division of Nanotechnology, DGIST, 42988, South Korea. dear.hjlee@dgist.ac.kr.
Lee HJ; Division of Nanotechnology, DGIST, 42988, South Korea. dear.hjlee@dgist.ac.kr.

Nanoscale ; 15(35): 14476-14487, 2023 Sep 14.

Article en En | MEDLINE | ID: mdl-37605886

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Reino Unido

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