Nanoelectronics Using Metal-Insulator Transition.

Lee, Yoon Jung; Kim, Youngmin; Gim, Hyeongyu; Hong, Kootak; Jang, Ho Won

Lee, Yoon Jung; Kim, Youngmin; Gim, Hyeongyu; Hong, Kootak; Jang, Ho Won.

Afiliación

Lee YJ; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
Kim Y; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
Gim H; Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea.
Hong K; Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea.
Jang HW; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.

Adv Mater ; 36(5): e2305353, 2024 Feb.

Article en En | MEDLINE | ID: mdl-37594405

Palabras clave

Mott insulators; artificial neuron; artificial synapse; logic; memory; metal-insulator transition (MIT); nanoelectronics; sensors

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article Pais de publicación: Alemania

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