Your browser doesn't support javascript.
loading
The future transistors.
Cao, Wei; Bu, Huiming; Vinet, Maud; Cao, Min; Takagi, Shinichi; Hwang, Sungwoo; Ghani, Tahir; Banerjee, Kaustav.
Afiliación
  • Cao W; Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, USA.
  • Bu H; Advanced Logic and Memory Technology, IBM Research, Albany, NY, USA.
  • Vinet M; Université Grenoble Alpes, CEA-LETI, Grenoble, France.
  • Cao M; Pathfinding, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Takagi S; Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan.
  • Hwang S; Samsung Advanced Institute of Technology, Suwon-si, Korea.
  • Ghani T; Pathfinding and Technology Definition, Intel Corporation, Hillsboro, OR, USA.
  • Banerjee K; Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, USA. kaustav@ece.ucsb.edu.
Nature ; 620(7974): 501-515, 2023 Aug.
Article en En | MEDLINE | ID: mdl-37587295
The metal-oxide-semiconductor field-effect transistor (MOSFET), a core element of complementary metal-oxide-semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past six decades the physical gate length of MOSFETs has been scaled to sub-20 nanometres. However, the downscaling of transistors while keeping the power consumption low is increasingly challenging, even for the state-of-the-art fin field-effect transistors. Here we present a comprehensive assessment of the existing and future CMOS technologies, and discuss the challenges and opportunities for the design of FETs with sub-10-nanometre gate length based on a hierarchical framework established for FET scaling. We focus our evaluation on identifying the most promising sub-10-nanometre-gate-length MOSFETs based on the knowledge derived from previous scaling efforts, as well as the research efforts needed to make the transistors relevant to future logic integrated-circuit products. We also detail our vision of beyond-MOSFET future transistors and potential innovation opportunities. We anticipate that innovations in transistor technologies will continue to have a central role in driving future materials, device physics and topology, heterogeneous vertical and lateral integration, and computing technologies.
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nature Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nature Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido