Aluminum-Doping Effects on the Electronic States of Graphene Nanoflake: Diffusion and Hydrogen Storage Mechanism.

Tachikawa, Hiroto; Izumi, Yoshiki; Iyama, Tetsuji; Abe, Shigeaki; Watanabe, Ikuya

Tachikawa, Hiroto; Izumi, Yoshiki; Iyama, Tetsuji; Abe, Shigeaki; Watanabe, Ikuya.

Afiliación

Tachikawa H; Department of Applied Chemistry, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan.
Izumi Y; Department of Applied Chemistry, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan.
Iyama T; Department of Applied Chemistry, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan.
Abe S; Department of Dental and Biomedical Materials Science, Graduate School of Biomedical Sciences, Nagasaki University, Nagasaki 852-8102, Japan.
Watanabe I; Department of Dental and Biomedical Materials Science, Graduate School of Biomedical Sciences, Nagasaki University, Nagasaki 852-8102, Japan.

Nanomaterials (Basel) ; 13(14)2023 Jul 11.

Article en En | MEDLINE | ID: mdl-37513057

Palabras clave

Al-doping; H2 storage; absorption spectrum; aluminum addition; diffusion barrier; diffusion path; spin density

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2023 Tipo del documento: Article País de afiliación: Japón Pais de publicación: Suiza

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google