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A Silicon Sub-Bandgap Near-Infrared Photodetector with High Detectivity Based on Textured Si/Au Nanoparticle Schottky Junctions Covered with Graphene Film.
Dai, Xiyuan; Wu, Li; Liu, Kaixin; Ma, Fengyang; Yang, Yanru; Yu, Liang; Sun, Jian; Lu, Ming.
Afiliación
  • Dai X; Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
  • Wu L; Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
  • Liu K; Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
  • Ma F; Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
  • Yang Y; Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
  • Yu L; Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
  • Sun J; Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
  • Lu M; Yiwu Research Institute, Fudan University, Yiwu 322000, China.
Sensors (Basel) ; 23(13)2023 Jul 06.
Article en En | MEDLINE | ID: mdl-37448033
We present a straightforward approach to develop a high-detectivity silicon (Si) sub-bandgap near-infrared (NIR) photodetector (PD) based on textured Si/Au nanoparticle (NP) Schottky junctions coated with graphene film. This is a photovoltaic-type PD that operates at 0 V bias. The texturing of Si is to trap light for NIR absorption enhancement, and Schottky junctions facilitate sub-bandgap NIR absorption and internal photoemission. Both Au NPs and the texturing of Si were made in self-organized processes. Graphene offers additional pathways for hot electron transport and to increase photocurrent. Under 1319 nm illumination at room temperature, a responsivity of 3.9 mA/W and detectivity of 7.2 × 1010 cm × (Hz)1/2/W were obtained. Additionally, at -60 °C, the detectivity increased to 1.5 × 1011 cm × (Hz)1/2/W, with the dark current density reduced and responsivity unchanged. The result of this work demonstrates a facile method to create high-performance Si sub-bandgap NIR PDs for promising applications at ambient temperatures.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Nanopartículas del Metal / Grafito Idioma: En Revista: Sensors (Basel) Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Nanopartículas del Metal / Grafito Idioma: En Revista: Sensors (Basel) Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza