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Carrier tuning of 2D electron gas in field-effect devices based on Al2O3/ZnO heterostructures.
Zhu, Xinyi; Zhang, Tianbao; He, Yongjie; Liu, Yuhang; Zhu, Hao.
Afiliación
  • Zhu X; School of Microelectronics, Fudan University, Shanghai 200433, China. hao_zhu@fudan.edu.cn.
  • Zhang T; School of Microelectronics, Fudan University, Shanghai 200433, China. hao_zhu@fudan.edu.cn.
  • He Y; School of Microelectronics, Fudan University, Shanghai 200433, China. hao_zhu@fudan.edu.cn.
  • Liu Y; Institute of Semiconductor Manufacturing Research, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, Guangdong 518060, China. yh_liu@szu.edu.cn.
  • Zhu H; School of Microelectronics, Fudan University, Shanghai 200433, China. hao_zhu@fudan.edu.cn.
Nanoscale ; 15(28): 12071-12077, 2023 Jul 20.
Article en En | MEDLINE | ID: mdl-37409568
Two-dimensional electron gas (2DEG) formed at oxide heterointerfaces via atomic layer deposition (ALD) has attracted considerable interest toward fascinating electron-related physics and electronic device applications. The employment of oxide-based 2DEG in a confined channel in field-effect transistors (FETs) holds great promise for advanced electronic devices due to its high mobility, spatial confinement, and tunable conductivity. In this work, a 2DEG FET based on the Al2O3/ZnO heterostructure is fabricated with an optimized channel carrier density and oxide thickness. The carrier transport in the bulk and the oxide interface dominantly governed by percolation conduction, optical phonon scattering, and grain boundary scattering is comparatively studied through oxygen annealing and thickness engineering. A tunable carrier density from 4 × 1011 cm-2 to 2 × 1014 cm-2 is achieved with a maximum Hall mobility of ∼62 cm2 V-1 s-1. The electron distribution associated with the annealing process of the ZnO underlayer and the interface reaction during Al2O3 deposition are found to have an impact on the electrical characteristics of the devices. The fabricated Al2O3/ZnO-based 2DEG FET exhibits an on/off ratio over 108, a subthreshold swing of 224 mV dec-1, and a field-effect mobility of 5.7 cm2 V-1 s-1 which can be promising for advanced oxide thin film-containing device and system applications.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido