Quantum anomalous Hall effect with a high and tunable Chern number in monolayer NdN<sub>2</sub>.

Li, Shengshi; Li, Xinyang; Ji, Weixiao; Li, Ping; Yan, Shishen; Zhang, Changwen

Quantum anomalous Hall effect with a high and tunable Chern number in monolayer NdN₂.

Li, Shengshi; Li, Xinyang; Ji, Weixiao; Li, Ping; Yan, Shishen; Zhang, Changwen.

Afiliación

Li S; Spintronics Institute & School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. hellojiweixiao@163.com.
Li X; School of Physics, Southeast University, Nanjing, Jiangsu, 211100, People's Republic of China.
Ji W; Spintronics Institute & School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. hellojiweixiao@163.com.
Li P; Spintronics Institute & School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. hellojiweixiao@163.com.
Yan S; Spintronics Institute & School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. hellojiweixiao@163.com.
Zhang C; Spintronics Institute & School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. hellojiweixiao@163.com.

Phys Chem Chem Phys ; 25(27): 18275-18283, 2023 Jul 12.

Article en En | MEDLINE | ID: mdl-37395308

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article Pais de publicación: Reino Unido

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