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In-Grain Ferroelectric Switching in Sub-5 nm Thin Al0.74 Sc0.26 N Films at 1 V.
Schönweger, Georg; Wolff, Niklas; Islam, Md Redwanul; Gremmel, Maike; Petraru, Adrian; Kienle, Lorenz; Kohlstedt, Hermann; Fichtner, Simon.
Afiliación
  • Schönweger G; Department of Electrical and Information Engineering, Kiel University, Kaiserstrasse 2, D-24143, Kiel, Germany.
  • Wolff N; Fraunhofer Institute for Silicon Technology (ISIT), Fraunhoferstr. 1, D-25524, Itzehoe, Germany.
  • Islam MR; Department of Material Science, Kiel University, Kaiserstrasse 2, D-24143, Kiel, Germany.
  • Gremmel M; Kiel Nano, Surface and Interface Science (KiNSIS), Kiel University, Christian-Albrechts-Platz 4, D-24118, Kiel, Germany.
  • Petraru A; Department of Material Science, Kiel University, Kaiserstrasse 2, D-24143, Kiel, Germany.
  • Kienle L; Department of Material Science, Kiel University, Kaiserstrasse 2, D-24143, Kiel, Germany.
  • Kohlstedt H; Department of Electrical and Information Engineering, Kiel University, Kaiserstrasse 2, D-24143, Kiel, Germany.
  • Fichtner S; Department of Material Science, Kiel University, Kaiserstrasse 2, D-24143, Kiel, Germany.
Adv Sci (Weinh) ; 10(25): e2302296, 2023 Sep.
Article en En | MEDLINE | ID: mdl-37382398
Analog switching in ferroelectric devices promises neuromorphic computing with the highest energy efficiency if limited device scalability can be overcome. To contribute to a solution, one reports on the ferroelectric switching characteristics of sub-5 nm thin Al0.74 Sc0.26 N films grown on Pt/Ti/SiO2 /Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, the study focuses on the following major achievements compared to previously available wurtzite-type ferroelectrics: 1) Record low switching voltages down to 1 V are achieved, which is in a range that can be supplied by standard on-chip voltage sources. 2) Compared to the previously investigated deposition of ultrathin Al1-x Scx N films on epitaxial templates, a significantly larger coercive field (Ec ) to breakdown field ratio is observed for Al0.74 Sc0.26 N films grown on silicon substrates, the technologically most relevant substrate-type. 3) The formation of true ferroelectric domains in wurtzite-type materials is for the first time demonstrated on the atomic scale by scanning transmission electron microscopy (STEM) investigations of a sub-5 nm thin partially switched film. The direct observation of inversion domain boundaries (IDB) within single nm-sized grains supports the theory of a gradual domain-wall driven switching process in wurtzite-type ferroelectrics. Ultimately, this should enable the analog switching necessary for mimicking neuromorphic concepts also in highly scaled devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2023 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Alemania
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2023 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Alemania