Your browser doesn't support javascript.
loading
Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm.
Setälä, Olli E; Chen, Kexun; Pasanen, Toni P; Liu, Xiaolong; Radfar, Behrad; Vähänissi, Ville; Savin, Hele.
Afiliación
  • Setälä OE; Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland.
  • Chen K; Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland.
  • Pasanen TP; Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland.
  • Liu X; Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland.
  • Radfar B; Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland.
  • Vähänissi V; Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland.
  • Savin H; Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland.
ACS Photonics ; 10(6): 1735-1741, 2023 Jun 21.
Article en En | MEDLINE | ID: mdl-37363632
Detection of UV light has traditionally been a major challenge for Si photodiodes due to reflectance losses and junction recombination. Here we overcome these problems by combining a nanostructured surface with an optimized implanted junction and compare the obtained performance to state-of-the-art commercial counterparts. We achieve a significant improvement in responsivity, reaching near ideal values at wavelengths all the way from 200 to 1000 nm. Dark current, detectivity, and rise time are in turn shown to be on a similar level. The presented detector design allows a highly sensitive operation over a wide wavelength range without making major compromises regarding the simplicity of the fabrication or other figures of merit relevant to photodiodes.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Photonics Año: 2023 Tipo del documento: Article País de afiliación: Finlandia Pais de publicación: Estados Unidos

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Photonics Año: 2023 Tipo del documento: Article País de afiliación: Finlandia Pais de publicación: Estados Unidos