Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization.

Li, Xiangdong; Wang, Meng; Zhang, Jincheng; Gao, Rui; Wang, Hongyue; Yang, Weitao; Yuan, Jiahui; You, Shuzhen; Chang, Jingjing; Liu, Zhihong; Hao, Yue

Li, Xiangdong; Wang, Meng; Zhang, Jincheng; Gao, Rui; Wang, Hongyue; Yang, Weitao; Yuan, Jiahui; You, Shuzhen; Chang, Jingjing; Liu, Zhihong; Hao, Yue.

Afiliación

Li X; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
Wang M; Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
Zhang J; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
Gao R; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
Wang H; Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
Yang W; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
Yuan J; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
You S; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
Chang J; Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
Liu Z; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
Hao Y; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.

Micromachines (Basel) ; 14(5)2023 May 12.

Article en En | MEDLINE | ID: mdl-37241665

Palabras clave

BTI; TDGB; charge; p-GaN gate HEMTs

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza

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