Highly Sensitive Detection of Urea Using Si Electrolyte-Gated Transistor with Low Power Consumption.

Choi, Wonyeong; Jin, Bo; Shin, Seonghwan; Do, Jeonghyeon; Son, Jongmin; Kim, Kihyun; Lee, Jeong-Soo

Choi, Wonyeong; Jin, Bo; Shin, Seonghwan; Do, Jeonghyeon; Son, Jongmin; Kim, Kihyun; Lee, Jeong-Soo.

Afiliación

Choi W; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Jin B; Zhejiang RockerStone Electronics Technology Co., Ltd. (Defeng Electronic Technology), Jiaxing 314000, China.
Shin S; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Do J; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Son J; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Kim K; Division of Electronics Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea.
Lee JS; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.

Biosensors (Basel) ; 13(5)2023 May 22.

Article en En | MEDLINE | ID: mdl-37232926

Asunto(s)

Electrólitos; Urea

Palabras clave

biologically active field-effect transistor; electrolyte-gated transistor; high sensitivity; low power consumption; urea detection

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Urea / Electrólitos Tipo de estudio: Diagnostic_studies Idioma: En Revista: Biosensors (Basel) Año: 2023 Tipo del documento: Article Pais de publicación: Suiza

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google