Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and Challenges.

Chen, Shaochuan; Zhang, Teng; Tappertzhofen, Stefan; Yang, Yuchao; Valov, Ilia

Chen, Shaochuan; Zhang, Teng; Tappertzhofen, Stefan; Yang, Yuchao; Valov, Ilia.

Afiliación

Chen S; Institute of Materials in Electrical Engineering 2 (IWE2), RWTH Aachen University, Sommerfeldstraße 24, 52074, Aachen, Germany.
Zhang T; Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China.
Tappertzhofen S; Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Martin-Schmeisser-Weg 4-6, D-44227, Dortmund, Germany.
Yang Y; Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China.
Valov I; School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China.

Adv Mater ; 35(37): e2301924, 2023 Sep.

Article en En | MEDLINE | ID: mdl-37199224

Asunto(s)

Encéfalo; Sinapsis; Sinapsis/fisiología; Neuronas/fisiología; Electrodos

Palabras clave

artificial neurons and synapses; brain-inspired computing; memristors; nanoionics

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Sinapsis / Encéfalo Tipo de estudio: Prognostic_studies Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Alemania

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