Formation and Polymorphism of Semiconducting K<sub>2</sub>SiH<sub>6</sub> and Strategy for Metallization.

Vekilova, Olga Yu; Beyer, Doreen C; Bhat, Shrikant; Farla, Robert; Baran, Volodymyr; Simak, Sergei I; Kohlmann, Holger; Häussermann, Ulrich; Spektor, Kristina

Formation and Polymorphism of Semiconducting K₂SiH₆ and Strategy for Metallization.

Vekilova, Olga Yu; Beyer, Doreen C; Bhat, Shrikant; Farla, Robert; Baran, Volodymyr; Simak, Sergei I; Kohlmann, Holger; Häussermann, Ulrich; Spektor, Kristina.

Afiliación

Vekilova OY; Department of Materials and Environmental Chemistry, Stockholm University, SE-10691 Stockholm, Sweden.
Beyer DC; Condensed Matter Theory, Department of Physics, AlbaNova University Center, Royal Institute of Technology (KTH), 106 91 Stockholm, Sweden.
Bhat S; Institute for Inorganic Chemistry, Leipzig University, Johannisallee 29, D-04103 Leipzig, Germany.
Farla R; Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, D-22607 Hamburg, Germany.
Baran V; Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, D-22607 Hamburg, Germany.
Simak SI; Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, D-22607 Hamburg, Germany.
Kohlmann H; Theoretical Physics Division, Department of Physics, Chemistry and Biology (IFM) Linköping University, SE-581 83 Linköping, Sweden.
Häussermann U; Department of Physics and Astronomy, Uppsala University, SE-75120 Uppsala, Sweden.
Spektor K; Institute for Inorganic Chemistry, Leipzig University, Johannisallee 29, D-04103 Leipzig, Germany.

Inorg Chem ; 62(21): 8093-8100, 2023 May 29.

Article en En | MEDLINE | ID: mdl-37188333

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Inorg Chem Año: 2023 Tipo del documento: Article País de afiliación: Suecia Pais de publicación: Estados Unidos

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