Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces.

Ceponis, Tomas; Pavlov, Jevgenij; Kadys, Arunas; Vaitkevicius, Augustas; Gaubas, Eugenijus

Ceponis, Tomas; Pavlov, Jevgenij; Kadys, Arunas; Vaitkevicius, Augustas; Gaubas, Eugenijus.

Afiliación

Ceponis T; Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, Lithuania.
Pavlov J; Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, Lithuania.
Kadys A; Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, Lithuania.
Vaitkevicius A; Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, Lithuania.
Gaubas E; Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, Lithuania.

Materials (Basel) ; 16(9)2023 Apr 27.

Article en En | MEDLINE | ID: mdl-37176305

Palabras clave

dislocations; gallium nitride; photoluminescence; pulsed photo-ionization spectroscopy; wet etching

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2023 Tipo del documento: Article País de afiliación: Lituania Pais de publicación: Suiza

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