Resolidified Chalcogen Precursors for High-Quality 2D Semiconductor Growth.

Wu, Qinke; Nong, Huiyu; Zheng, Rongxu; Zhang, Rongjie; Wang, Jingwei; Yang, Liusi; Liu, Bilu

Wu, Qinke; Nong, Huiyu; Zheng, Rongxu; Zhang, Rongjie; Wang, Jingwei; Yang, Liusi; Liu, Bilu.

Afiliación

Wu Q; Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China.
Nong H; Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China.
Zheng R; Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China.
Zhang R; Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China.
Wang J; Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China.
Yang L; Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China.
Liu B; Department of Physics, Capital Normal University, Beijing, 100048, P. R. China.

Angew Chem Int Ed Engl ; 62(29): e202301501, 2023 Jul 17.

Article en En | MEDLINE | ID: mdl-37013825

Palabras clave

2D Materials; Defects; Resolidified Sulfur; Transition Metal Dichalcogenides; Tungsten Disulfide

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Angew Chem Int Ed Engl Año: 2023 Tipo del documento: Article Pais de publicación: Alemania

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google