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Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance.
Dan, Zhiying; Yang, Baoxiang; Song, Qiqi; Chen, Jianru; Li, Hengyi; Gao, Wei; Huang, Le; Zhang, Menglong; Yang, Mengmeng; Zheng, Zhaoqiang; Huo, Nengjie; Han, Lixiang; Li, Jingbo.
Afiliación
  • Dan Z; Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China.
  • Yang B; Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747AG, The Netherlands.
  • Song Q; Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China.
  • Chen J; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
  • Li H; Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China.
  • Gao W; Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China.
  • Huang L; Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China.
  • Zhang M; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
  • Yang M; Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China.
  • Zheng Z; Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China.
  • Huo N; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
  • Han L; Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China.
  • Li J; Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China.
ACS Appl Mater Interfaces ; 15(14): 18101-18113, 2023 Apr 12.
Article en En | MEDLINE | ID: mdl-36989425
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article Pais de publicación: Estados Unidos