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Ti3 C2 Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors.
Wang, Chuanju; Xu, Xiangming; Tyagi, Shubham; Rout, Paresh C; Schwingenschlögl, Udo; Sarkar, Biplab; Khandelwal, Vishal; Liu, Xinke; Gao, Linfei; Hedhili, Mohamed Nejib; Alshareef, Husam N; Li, Xiaohang.
Afiliación
  • Wang C; Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
  • Xu X; Physical Science, and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
  • Tyagi S; Physical Science, and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
  • Rout PC; Physical Science, and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
  • Schwingenschlögl U; Physical Science, and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
  • Sarkar B; Department of Electronics & Communication Engineering, IIT Roorkee, Roorkee, Uttarakhand, 247667, India.
  • Khandelwal V; Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
  • Liu X; College of Materials Science and Engineering, Shenzhen Key Laboratory of Microscale Optical Information Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, P. R. China.
  • Gao L; College of Materials Science and Engineering, Shenzhen Key Laboratory of Microscale Optical Information Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, P. R. China.
  • Hedhili MN; Core Laboratories, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
  • Alshareef HN; Physical Science, and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
  • Li X; Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
Adv Mater ; 35(22): e2211738, 2023 Jun.
Article en En | MEDLINE | ID: mdl-36942383
Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3 C2 Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off-state current (IOFF ) of 10-7 mA mm-1 , a record high ION /IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off-state drain breakdown voltage of 1085 V, and a near-ideal subthreshold swing of 61 mV dec-1 . This work shows the great potential of MXene films as gate electrodes in wide-bandgap semiconductor devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article País de afiliación: Arabia Saudita Pais de publicación: Alemania
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article País de afiliación: Arabia Saudita Pais de publicación: Alemania