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Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay.
Baek, Woo Jin; Park, Juhyuk; Shim, Joonsup; Kim, Bong Ho; Park, Seongchong; Kim, Hyun Soo; Geum, Dae-Myeong; Kim, Sang Hyeon.
Afiliación
  • Baek WJ; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
  • Park J; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
  • Shim J; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
  • Kim BH; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
  • Park S; Division of Physical Metrology, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea.
  • Kim HS; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
  • Geum DM; Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea. dmgeum@chungbuk.ac.kr.
  • Kim SH; School of Electronics Engineering, Chungbuk National University, Chungcheongbuhk-do, 28644, Republic of Korea. dmgeum@chungbuk.ac.kr.
Nat Commun ; 14(1): 1386, 2023 Mar 17.
Article en En | MEDLINE | ID: mdl-36932091
InGaN-based micro-light-emitting diodes have a strong potential as a crucial building block for next-generation displays. However, small-size pixels suffer from efficiency degradations, which increase the power consumption of the display. We demonstrate strategies for epitaxial structure engineering carefully considering the quantum barrier layer and electron blocking layer to alleviate efficiency degradations in low current injection regime by reducing the lateral diffusion of injected carriers via reducing the tunneling rate of electrons through the barrier layer and balanced carrier injection. As a result, the fabricated micro-light-emitting diodes show a high external quantum efficiency of 3.00% at 0.1 A/cm2 for the pixel size of 10 × 10 µm2 and a negligible Jmax EQE shift during size reduction, which is challenging due to the non-radiative recombination at the sidewall. Furthermore, we verify that our epitaxy strategies can result in the relaxation of self-heating of the micro-light-emitting diodes, where the average pixel temperature was effectively reduced.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2023 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2023 Tipo del documento: Article Pais de publicación: Reino Unido