Efficiency Improvement of Industrial Silicon Solar Cells by the POCl3 Diffusion Process.
Materials (Basel)
; 16(5)2023 Feb 23.
Article
en En
| MEDLINE
| ID: mdl-36902940
To improve the efficiency of polycrystalline silicon solar cells, process optimization is a key technology in the photovoltaic industry. Despite the efficiency of this technique to be reproducible, economic, and simple, it presents a major inconvenience to have a heavily doped region near the surface which induces a high minority carrier recombination. To limit this effect, an optimization of diffused phosphorous profiles is required. A "low-high-low" temperature step of the POCl3 diffusion process was developed to improve the efficiency of industrial-type polycrystalline silicon solar cells. The low surface concentration of phosphorus doping of 4.54 × 1020 atoms/cm3 and junction depth of 0.31 µm at a dopant concentration of N = 1017 atoms/cm3 were obtained. The open-circuit voltage and fill factor of solar cells increased up to 1 mV and 0.30%, compared with the online low-temperature diffusion process, respectively. The efficiency of solar cells and the power of PV cells were increased by 0.1% and 1 W, respectively. This POCl3 diffusion process effectively improved the overall efficiency of industrial-type polycrystalline silicon solar cells in this solar field.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Materials (Basel)
Año:
2023
Tipo del documento:
Article
País de afiliación:
China
Pais de publicación:
Suiza