Antireflective GaN Nanoridge Texturing by Metal-Assisted Chemical Etching via a Thermally Dewetted Pt Catalyst Network for Highly Responsive Ultraviolet Photodiodes.

Liao, Yikai; Kim, You Jin; Lai, Junyu; Seo, Jung-Hun; Kim, Munho

Liao, Yikai; Kim, You Jin; Lai, Junyu; Seo, Jung-Hun; Kim, Munho.

Afiliación

Liao Y; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Kim YJ; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Lai J; Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States.
Seo JH; Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States.
Kim M; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

ACS Appl Mater Interfaces ; 15(10): 13343-13352, 2023 Mar 15.

Article en En | MEDLINE | ID: mdl-36880165

Palabras clave

antireflection; gallium nitride; metal-assisted chemical etching; photodiode; ultraviolet

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article País de afiliación: Singapur Pais de publicación: Estados Unidos

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