Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices.

Pyo, Juyeong; Bae, Jong-Ho; Kim, Sungjun; Cho, Seongjae

Pyo, Juyeong; Bae, Jong-Ho; Kim, Sungjun; Cho, Seongjae.

Afiliación

Pyo J; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Bae JH; School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of Korea.
Kim S; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Cho S; Department of Electronics Engineering, Gachon University, Seongnam 13120, Republic of Korea.

Materials (Basel) ; 16(3)2023 Feb 01.

Article en En | MEDLINE | ID: mdl-36770256

Palabras clave

IGZO; neuromorphic system; short-term memory; synaptic device; three-terminal device

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2023 Tipo del documento: Article Pais de publicación: Suiza

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