Alternatives to aluminum gates for silicon quantum devices: defects and strain.

Stein, Ryan M; Barcikowski, Z S; Pookpanratana, S J; Pomeroy, J M; Stewart, M D

Stein, Ryan M; Barcikowski, Z S; Pookpanratana, S J; Pomeroy, J M; Stewart, M D.

Afiliación

Stein RM; Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA.
Barcikowski ZS; Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA.
Pookpanratana SJ; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
Pomeroy JM; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
Stewart MD; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

J Appl Phys ; 130(11)2021.

Article en En | MEDLINE | ID: mdl-36733463

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Appl Phys Año: 2021 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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