High-Power LiNbO<sub>3</sub> Domain-Wall Nanodevices.

Sun, Jie; Li, Yiming; Zhang, Boyang; Jiang, Anquan

High-Power LiNbO₃ Domain-Wall Nanodevices.

Sun, Jie; Li, Yiming; Zhang, Boyang; Jiang, Anquan.

Afiliación

Sun J; State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China.
Li Y; State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China.
Zhang B; State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China.
Jiang A; State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China.

ACS Appl Mater Interfaces ; 15(6): 8691-8698, 2023 Feb 15.

Article en En | MEDLINE | ID: mdl-36724474

Palabras clave

LiNbO3 single crystal; current density; diode; domain wall; inclination angle; nanodevices

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos

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