THz Thin Film Varactor Based on Integrated Ferroelectric HfZrO<sub>2</sub>.

Abdulazhanov, Sukhrob; Le, Quang Huy; Huynh, Dang Khoa; Wang, Defu; Lehninger, David; Kämpfe, Thomas; Gerlach, Gerald

THz Thin Film Varactor Based on Integrated Ferroelectric HfZrO₂.

Abdulazhanov, Sukhrob; Le, Quang Huy; Huynh, Dang Khoa; Wang, Defu; Lehninger, David; Kämpfe, Thomas; Gerlach, Gerald.

Afiliación

Abdulazhanov S; Center Nanoelectronic Technologies, Fraunhofer IPMS, 01109Dresden, Germany.
Le QH; Center Nanoelectronic Technologies, Fraunhofer IPMS, 01109Dresden, Germany.
Huynh DK; Center Nanoelectronic Technologies, Fraunhofer IPMS, 01109Dresden, Germany.
Wang D; Center Nanoelectronic Technologies, Fraunhofer IPMS, 01109Dresden, Germany.
Lehninger D; Center Nanoelectronic Technologies, Fraunhofer IPMS, 01109Dresden, Germany.
Kämpfe T; Center Nanoelectronic Technologies, Fraunhofer IPMS, 01109Dresden, Germany.
Gerlach G; Institute of Solid State Electronics, TU Dresden, 01067Dresden, Germany.

ACS Appl Electron Mater ; 5(1): 189-195, 2023 Jan 24.

Article en En | MEDLINE | ID: mdl-36711042

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Electron Mater Año: 2023 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos

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