Your browser doesn't support javascript.
loading
Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD.
Wang, Zhenyu; Tripathi, Mukesh; Golsanamlou, Zahra; Kumari, Poonam; Lovarelli, Giuseppe; Mazziotti, Fabrizio; Logoteta, Demetrio; Fiori, Gianluca; Sementa, Luca; Marega, Guilherme Migliato; Ji, Hyun Goo; Zhao, Yanfei; Radenovic, Aleksandra; Iannaccone, Giuseppe; Fortunelli, Alessandro; Kis, Andras.
Afiliación
  • Wang Z; Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
  • Tripathi M; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
  • Golsanamlou Z; Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
  • Kumari P; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
  • Lovarelli G; CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy.
  • Mazziotti F; CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy.
  • Logoteta D; Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy.
  • Fiori G; Department of Physics "E. Fermi", Università di Pisa, Pisa, I-56127, Italy.
  • Sementa L; Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy.
  • Marega GM; Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy.
  • Ji HG; Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy.
  • Zhao Y; CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy.
  • Radenovic A; Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
  • Iannaccone G; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
  • Fortunelli A; Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
  • Kis A; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
Adv Mater ; 35(14): e2209371, 2023 Apr.
Article en En | MEDLINE | ID: mdl-36644893
Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n-type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p-type MoS2 , which is crucial for complementary logic applications but remains difficult. In this work, high-quality NbS2 -MoS2 lateral heterostructures are synthesized by one-step metal-organic chemical vapor deposition (MOCVD) together with monolayer MoS2 substitutionally doped by Nb, resulting in a p-type doped behavior. The heterojunction shows a p-type transfer characteristic with a high on/off current ratio of ≈104 , exceeding previously reported values. The band structure through the NbS2 -MoS2 heterojunction is investigated by density functional theory (DFT) and quantum transport simulations. This work provides a scalable approach to synthesize substitutionally doped TMDC materials and provides an insight into the interface between 2D metals and semiconductors in lateral heterostructures, which is imperative for the development of next-generation nanoelectronics and highly integrated devices.
Palabras clave
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article País de afiliación: Suiza Pais de publicación: Alemania
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article País de afiliación: Suiza Pais de publicación: Alemania