Study of Effect of Coil Movement on Growth Conditions of SiC Crystal.

Zhang, Shengtao; Fu, Hao; Li, Tie; Fan, Guofeng; Zhao, Lili

Zhang, Shengtao; Fu, Hao; Li, Tie; Fan, Guofeng; Zhao, Lili.

Afiliación

Zhang S; School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China.
Fu H; School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China.
Li T; School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China.
Fan G; Harbin KY Semiconductor Inc., Harbin 150028, China.
Zhao L; School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China.

Materials (Basel) ; 16(1)2022 Dec 28.

Article en En | MEDLINE | ID: mdl-36614620

Palabras clave

coil movement; growth interface; silicon carbide; temperature gradient

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google