Energy dispersive anti-anharmonic effect in a Fano intervened semiconductor: revealed through temperature and wavelength-dependent Raman scattering.

Rani, Chanchal; Kandpal, Suchita; Ghosh, Tanushree; Bansal, Love; Tanwar, Manushree; Kumar, Rajesh

Rani, Chanchal; Kandpal, Suchita; Ghosh, Tanushree; Bansal, Love; Tanwar, Manushree; Kumar, Rajesh.

Afiliación

Rani C; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol-453552, India. rajeshkumar@iiti.ac.in.
Kandpal S; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol-453552, India. rajeshkumar@iiti.ac.in.
Ghosh T; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol-453552, India. rajeshkumar@iiti.ac.in.
Bansal L; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol-453552, India. rajeshkumar@iiti.ac.in.
Tanwar M; Department of Chemistry, University of Pennsylvania, 231S, 34 Street, Philadelphia, PA 19104-6323, USA. tmanu@sas.upenn.edu.
Kumar R; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol-453552, India. rajeshkumar@iiti.ac.in.

Phys Chem Chem Phys ; 25(3): 1627-1631, 2023 Jan 18.

Article en En | MEDLINE | ID: mdl-36601877

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article País de afiliación: India Pais de publicación: Reino Unido

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