The Electrical and Thermal Characteristics of Stacked GaN MISHEMT.

Hui, Caixin; Chen, Qiuqi; Shi, Yijun; He, Zhiyuan; Huang, Yun; Lu, Xiangjun; Wang, Hongyue; Jiang, Jie; Lu, Guoguang

Hui, Caixin; Chen, Qiuqi; Shi, Yijun; He, Zhiyuan; Huang, Yun; Lu, Xiangjun; Wang, Hongyue; Jiang, Jie; Lu, Guoguang.

Afiliación

Hui C; School of Materials Science and Engineering, Xiamen University of Technology, Xiamen 361024, China.
Chen Q; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
Shi Y; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
He Z; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
Huang Y; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
Lu X; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
Wang H; School of Materials Science and Engineering, Xiamen University of Technology, Xiamen 361024, China.
Jiang J; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
Lu G; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.

Micromachines (Basel) ; 13(12)2022 Nov 28.

Article en En | MEDLINE | ID: mdl-36557400

Palabras clave

electrical performance parameters; stacked GaN MISHEMTs; thermal coupling; thermal resistance model

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Micromachines (Basel) Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza

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