Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications.

Song, Myeong-Ho; Ko, Woon-San; Kim, Geun-Ho; Choi, Dong-Hyeuk; Lee, Ga-Won

Song, Myeong-Ho; Ko, Woon-San; Kim, Geun-Ho; Choi, Dong-Hyeuk; Lee, Ga-Won.

Afiliación

Song MH; Nano Convergence Technology Division, National NanoFab Center, Daejeon 34141, Republic of Korea.
Ko WS; Division of Electronics Engineering, Chung-nam National University, Daejeon 34134, Republic of Korea.
Kim GH; Division of Electronics Engineering, Chung-nam National University, Daejeon 34134, Republic of Korea.
Choi DH; ISTE Co., Ltd., 306 Toseong-ro, Hyangnam-eup, Hwaseong-si 18589, Republic of Korea.
Lee GW; ISTE Co., Ltd., 306 Toseong-ro, Hyangnam-eup, Hwaseong-si 18589, Republic of Korea.

Nanomaterials (Basel) ; 12(23)2022 Dec 06.

Article en En | MEDLINE | ID: mdl-36500965

Palabras clave

HAST; PECVD; RRAM; SiCN; endurance

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2022 Tipo del documento: Article Pais de publicación: Suiza

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