Stable ZnS Electron Transport Layer for High-Performance Inverted Cadmium-Free Quantum Dot Light-Emitting Diodes.

Mude, Nagarjuna Naik; Khan, Yeasin; Thuy, Truong Thi; Walker, Bright; Kwon, Jang Hyuk

Mude, Nagarjuna Naik; Khan, Yeasin; Thuy, Truong Thi; Walker, Bright; Kwon, Jang Hyuk.

Afiliación

Mude NN; Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemoon-gu, Seoul 130-701, Republic of Korea.
Khan Y; Department of Chemistry, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemoon-gu, Seoul 130-701, Republic of Korea.
Thuy TT; Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemoon-gu, Seoul 130-701, Republic of Korea.
Walker B; Department of Chemistry, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemoon-gu, Seoul 130-701, Republic of Korea.
Kwon JH; Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemoon-gu, Seoul 130-701, Republic of Korea.

ACS Appl Mater Interfaces ; 14(50): 55925-55932, 2022 Dec 21.

Article en En | MEDLINE | ID: mdl-36484498

Palabras clave

cadmium-free quantum dots; charge balance; device lifetime; electron transport layer; exciton quenching

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article Pais de publicación: Estados Unidos

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