Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure.

Noh, Hee Yeon; Lee, Woo-Geun; G R, Haripriya; Cha, Jung-Hwa; Kim, June-Seo; Yun, Won Seok; Lee, Myoung-Jae; Lee, Hyeon-Jun

Noh, Hee Yeon; Lee, Woo-Geun; G R, Haripriya; Cha, Jung-Hwa; Kim, June-Seo; Yun, Won Seok; Lee, Myoung-Jae; Lee, Hyeon-Jun.

Afiliación

Noh HY; Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
Lee WG; Development Team, Samsung Display, Gyeonggi, 17113, Republic of Korea.
G R H; Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
Cha JH; Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
Kim JS; Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
Yun WS; Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
Lee MJ; Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
Lee HJ; Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea. dear.hjlee@dgist.ac.kr.

Sci Rep ; 12(1): 19816, 2022 Nov 17.

Article en En | MEDLINE | ID: mdl-36396967

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2022 Tipo del documento: Article Pais de publicación: Reino Unido

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