Enabling Durable Ultralow-k Capacitors with Enhanced Breakdown Strength in Density-Variant Nanolattices.

Kim, Min-Woo; Lifson, Max L; Gallivan, Rebecca; Greer, Julia R; Kim, Bong-Joong

Kim, Min-Woo; Lifson, Max L; Gallivan, Rebecca; Greer, Julia R; Kim, Bong-Joong.

Afiliación

Kim MW; School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Korea.
Lifson ML; Molecular Design Institute, Department of Chemistry, New York University, New York, NY, 10012, USA.
Gallivan R; Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA, 91125, USA.
Greer JR; Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA, 91125, USA.
Kim BJ; Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA, 91125, USA.

Adv Mater ; 35(6): e2208409, 2023 Feb.

Article en En | MEDLINE | ID: mdl-36380720

Palabras clave

density-variant nanolattice; electrical breakdown; electrical conduction mechanism; mechanical deformation; ultralow-k

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article Pais de publicación: Alemania

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