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Enhanced Transverse Seebeck Coefficients in 2D/2D PtSe2/MoS2 Heterostructures Using Wet-Transfer Stacking.
Kang, Min-Sung; Lee, Won-Yong; Yoon, Young-Gui; Choi, Jae Won; Kim, Gil-Sung; Kim, Si-Hoo; Park, No-Won; Lee, Sang-Kwon.
Afiliación
  • Kang MS; Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea.
  • Lee WY; Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Uppsala75103, Sweden.
  • Yoon YG; Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea.
  • Choi JW; Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea.
  • Kim GS; Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea.
  • Kim SH; Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea.
  • Park NW; Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea.
  • Lee SK; Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea.
ACS Appl Mater Interfaces ; 14(46): 51881-51888, 2022 Nov 23.
Article en En | MEDLINE | ID: mdl-36355622
It is very challenging to estimate thermoelectric (TE) properties when applying millimeter-scale two-dimensional (2D) transition metal dichalcogenide (TMDC) materials to TE device applications, particularly their Seebeck coefficient due to their high intrinsic electrical resistance. This paper proposes an innovative approach to measure large transverse (i.e., in-plane) Seebeck coefficients for 2D TMDC materials by placing a low resistance (LR) semimetallic PtSe2 film on high-resistance (HR) semiconducting MoS2 (>10 MΩ), whose internal resistance is too high to measure the Seebeck coefficient, forming a heterojunction structure using wet-transfer stacking. The vertically stacked LR-PtSe2 (3 nm)/HR-MoS2 (12 nm) heterostructure film exhibits a high Seebeck coefficient > 190 µV/K up to 5 K temperature difference. This unusual behavior can be explained by an additional Seebeck effect induced at the interface between the LR-2D/HR-2D heterostructure. The proposed stacked LR-PtSe2/HR-MoS2 heterostructure film offers promising phenomena 2D/2D materials that enable innovative TE device applications.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
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XML
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article Pais de publicación: Estados Unidos