High Performance of Zero-Power-Consumption MOCVD-Grown ß-Ga<sub>2</sub>O<sub>3</sub>-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities.

Sheoran, Hardhyan; Fang, Shi; Liang, Fangzhou; Huang, Zhe; Kaushik, Shuchi; Manikanthababu, Nethala; Zhao, Xiaolong; Sun, Haiding; Singh, Rajendra; Long, Shibing

High Performance of Zero-Power-Consumption MOCVD-Grown ß-Ga₂O₃-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities.

Sheoran, Hardhyan; Fang, Shi; Liang, Fangzhou; Huang, Zhe; Kaushik, Shuchi; Manikanthababu, Nethala; Zhao, Xiaolong; Sun, Haiding; Singh, Rajendra; Long, Shibing.

Afiliación

Sheoran H; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India.
Fang S; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China.
Liang F; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China.
Huang Z; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China.
Kaushik S; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India.
Manikanthababu N; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India.
Zhao X; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China.
Sun H; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China.
Singh R; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India.
Long S; Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi110016, India.

ACS Appl Mater Interfaces ; 14(46): 52096-52107, 2022 Nov 23.

Article en En | MEDLINE | ID: mdl-36346904

Palabras clave

Ga2O3; MOCVD; PDCR; detectivity; responsivity; self-powered; solar-blind photodetector; ultrawide-band-gap semiconductor

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: India Pais de publicación: Estados Unidos

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